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HFA3134, HFA3135
Data Sheet August 12, 2005 FN4445.2
Ultra High Frequency Matched Pair Transistors
The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability.
Features
* NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz * NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100 * NPN Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . 2.6dB * PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz * PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 57 * PNP Noise Figure (50) at 900MHz . . . . . . . . . . . . 4.6dB * Small Package (EIAJ-SC74 Compliant) . . . . . . . .SOT23-6 * Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
* VHF/UHF Amplifiers * VHF/UHF Mixers
Ordering Information
PART NUMBER TEMP. (BRAND) RANGE (C) HFA3134IH96 (04/ ) HFA3134IHZ96 (4Z/ ) (Note) HFA3135IH96 (05/ ) HFA3135IHZ96 (5Z/ ) (Note) Z5 05 4Z 04 -40 to 85 -40 to 85 -40 to 85 -40 to 85 PACKAGE 6 Ld SOT23 Tape and Reel PKG. DWG. # P6.064
* IF Converters * Synchronous Detectors
Pinouts
P6.064
1 2 3 Q2
6 Ld SOT23 P6.064 Tape and Reel (Pb-free) 6 Ld SOT23 Tape and Reel
HFA3134 (SOT23) TOP VIEW
6 5 4
6 Ld SOT23 P6.064 Tape and Reel (Pb-free)
Q1
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
HFA3135 (SOT23) TOP VIEW
1 2 3 Q2 6 5 4
Q1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2000, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
HFA3134, HFA3135
Absolute Maximum Ratings
Collector to Emitter Voltage (RB 10k to GND) . . . . . . . . . . . . 11V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150C 26mA at TJ =125C Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V (Per MIL-STD-883 Method 3015.7)
Thermal Information
Thermal Resistance (Typical, Note 1)
JA (C/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350 Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175C Maximum Junction Temperature (Plastic Package) . . . . . . . . 150C Maximum Storage Temperature Range . . . . . . . . . . -65C to 150C Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300C (Soldering 10s, Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40C to 85C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. JA is measured with the component mounted on an evaluation PC board in free air. 2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current specification.
Electrical Specifications
TA = 25C (NOTE 3) TEST LEVEL
PARAMETER DC CHARACTERISTICS FOR HFA3134 (NPN) Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V(BR)CBO V(BR)CEO V(BR)CER
IC = 10A, IE = 0 IC = 100A, IB = 0 IC = 100A, RB = 10k IE = 10A, IC = 0 VCE = 6V, IB = 0 VCB = 8V, IE = 0 VEB = 1V, IC = 0
A A A B A A B C
12 4 11 -5 -5 48 48 48 48 48 48 20
21 9 17 6 1 1 95 780 1.2 1.0 0.7 -1.5 80 87 90 96 96 100 2 30
5 5 250 1000 6 6 6 200 200 200 200 200 200 8 -
V V V V nA nA pA nA mV mV mV mV mV mV/C
Emitter to Base Breakdown Voltage (Note 4) Collector-Cutoff-Current Collector-Cutoff-Current Emitter-Cutoff-Current (Note 5) Collector to Collector Leakage Collector to Emitter Saturation Voltage Base to Emitter Voltage (Note 5) Q1 to Q2 Base to Emitter Voltage Match (Note 5)
V(BR)EBO ICEO ICBO IEBO
VCE(SAT) VBE VBE
IC = 10mA, IB = 1mA IC = 10mA, VCE = 2V IC = 10mA, VCE = 2V IC = 1mA, VCE = 2V IC = 0.1mA, VCE = 2V
A A A A A C A A A A A A A A
Base to Emitter Voltage Drift DC Forward-Current Transfer Ratio (Note 5) hFE
IC = 10mA IC = 10mA, VCE = 2V IC = 1mA, VCE = 2V IC = 0.1mA, VCE = 2V IC = 10mA, VCE = 5V IC = 1mA, VCE = 5V IC = 0.1mA, VCE = 5V
Q1 to Q2 Current Transfer Ratio Match Early Voltage
hFE VA
1mA IC 10mA, 1V VCE 5V IC = 1mA, VCE = 3V
% V
2
FN4445.2 August 12, 2005
HFA3134, HFA3135
Electrical Specifications
TA = 25C (Continued) (NOTE 3) TEST LEVEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN) Noise Figure NF f = 1.0GHz, IC = 10mA, 1V VCE 5V, ZS = 50 f = 1.0GHz, IC = 1mA, 1V VCE 5V, ZS = 50 Current Gain-Bandwidth Product (Note 5) Power Gain-Bandwidth Product Base to Emitter Capacitance Collector to Base Capacitance fT IC = 10mA, VCE = 5V IC = 1mA, VCE = 5V fMAX IC = 10mA, VCE = 5V VBE = -0.5V VCB = 3V TA = 25C (NOTE 3) TEST LEVEL B B B B B B B 2.4 2.6 8.5 3 7.5 600 500 dB dB GHz GHz GHz fF fF
Electrical Specifications
PARAMETER DC CHARACTERISTICS FOR HFA3135 (PNP) Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V(BR)CBO V(BR)CEO V(BR)CER
IC = -10A, IE = 0 IC = -100A, IB = 0 IC = -100A, RB = 10k IE = -10A, IC = 0 VCE = -6V, IB = 0 VCB = -8V, IE = 0 VEB = -1V, IC = 0
A A A B A A B B
12 4 11 -5 -5 15 15 15 15 15 15 15 -
21 14 23 5 TBD 1 150 850 1 1 2 40 47 52 47 53 57 1 24 -1.4
5 5 250 1000 6 6 6 125 125 125 125 125 125 8 -
V V V V nA nA pA nA mV mV mV mV mV
Emitter to Base Breakdown Voltage (Note 4) Collector-Cutoff-Current Collector-Cutoff-Current Emitter-Cutoff-Current Collector to Collector Leakage Collector to Emitter Saturation Voltage Base to Emitter Voltage Q1 to Q2 Base to Emitter Voltage Match
V(BR)EBO ICEO ICBO IEBO
VCE(SAT) VBE VBE
IC = -10mA, IB = -1mA IC = -10mA, VCE = -2V IC = -10mA, VCE = -2V IC = -1mA, VCE = -2V IC = -0.1mA, VCE = -2V
A A A A A A A A A A A A A C
DC Forward-Current Transfer Ratio
hFE
IC = -10mA, VCE = -2V IC = -1mA, VCE = -2V IC = -0.1mA, VCE = -2V IC = -10mA, VCE = -5V IC = -1mA, VCE = -5V IC = -0.1mA, VCE = -5V
Q1 to Q2 Current Gain Match Early Voltage Base to Emitter Voltage Drift
hFE VA
-1mA IC -10mA, -1V VCE -5V IC = -1mA, VCE = -3V IC = -10mA
% V mV/C
3
FN4445.2 August 12, 2005
HFA3134, HFA3135
Electrical Specifications
TA = 25C (Continued) (NOTE 3) TEST LEVEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP) Noise Figure NF f = 900MHz, IC = -10mA, -1V VCE -5V, ZS = 50 f = 900MHz, IC = -1mA, -1V VCE -5V, ZS = 50 Current Gain-Bandwidth Product Power Gain-Bandwidth Product Base to Emitter Capacitance Collector to Base Capacitance NOTES: 3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only. 4. Measuring VEBO can degrade the transistor hFE and hFE match. 5. See Typical Performance Curves for more information. fT fMAX IC = -10mA, VCE = -5V IC = -10mA, VCE = -5V VBE = 0.5V VCB = -3V B B B B B B 5.2 4.6 7 TBD 550 400 dB dB GHz GHz fF fF
Typical Performance Curves
20 18 COLLECTOR CURRENT (mA) 16 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
TA = 25C, Unless Otherwise Specified
IB = 200A
COLLECTOR CURRENT AND BASE CURRENT (A)
100m 10m Q1 1m 100 10 1 100n 10n 1n 100p 10p 0.4 0.5 0.7 0.9 0.6 0.8 BASE TO EMITTER VOLTAGE (V) IB IC Q2
Q1 Q2
IB = 160A
IB = 120A
IB = 80A
Q1 Q2
IB = 40A
3.5
4.0
4.5
5.0
1.0
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE TO EMITTER VOLTAGE
4
FN4445.2 August 12, 2005
HFA3134, HFA3135 Typical Performance Curves
130 120 110 100 DC CURRENT GAIN 90 80 70 60 50 40 30 20 1n 1n 100n 1 10 100 1m 10m 100m 0.1 1 10 100 Q2 VCE = 3V VCE = 1V Q2 Q1 Q1 VCE = 5V GAIN BANDWIDTH (GHz) 10 9 8 7 6 5 4 VCE = 1V 3 2 1 VCE = 5V VCE = 3V
TA = 25C, Unless Otherwise Specified (Continued)
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT
1n COLLECTOR = OPEN EMITTER LEAKAGE CURRENT (A)
100p
10p
1p
0.1p
0
-0.3
-0.6
-0.9
-1.2
-1.5
-1.8
-2.1
-2.4
-2.7
-3.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. NPN EMITTER CUTOFF CURRENT vs BASE TO EMITTER VOLTAGE
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 5
FN4445.2 August 12, 2005

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